FQPF6N60C Key Features
- 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% ava
- Part: FQPF6N60C
- Manufacturer: Fairchild (official site)
- Size: 948.96 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQPF6N60 | 600V N-Channel MOSFET |
| FQPF6N15 | 150V N-Channel MOSFET |
| FQPF6N25 | 250V N-Channel MOSFET |
| FQPF6N40C | 400V N-Channel MOSFET |
| FQPF6N40CF | N-Channel MOSFET |
FQPF6N60C Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, .. planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.