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FQPF6N60C Datasheet 600V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Download the FQPF6N60C datasheet PDF. This datasheet also includes the FQP6N60C variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (FQP6N60C_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Overview

FQP6N60C/FQPF6N60C QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General.

Key Features

  • 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - C.

More Datasheets from Fairchild (now onsemi)

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