FQPF8N60CF Description
Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC),...
FQPF8N60CF Key Features
- 6.26 A, 600 V, RDS(on) = 1.5 Ω (Max.) @ VGS = 10 V, ID = 3.13 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 12 pF)
- 100% Avalanche Tested