FQPF8N60 - 600V N-Channel MOSFET

Download the FQPF8N60 datasheet PDF. This datasheet also covers the FQP8N60 variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

7.5A,600V,RDS(on)=1.0Ω@VGS=10V.
Low gate charge.
Low Crss (typical 23pF).
Fast switching.
100% AvalancheTested.
Improved dv/dt capability.
ROHS product General.

📥 Download Datasheet

FQPF8N60 600v n-channel mosfet by AOKE - Datasheet Preview — Note: The manufacturer provides a single datasheet file (FQP8N60-AOKE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	FQPF8N60
Manufacturer	AOKE
File Size	560.64 KB
Description	600V N-Channel MOSFET
Datasheet	FQPF8N60 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FQPF8N60	N-Channel Mosfet Transistor	Inchange Semiconductor
FQPF8N60	8A N-Channel MOSFET	OuCan
FQPF8N60C	600V N-Channel MOSFET	Fairchild Semiconductor
FQPF8N60CF	600V N-Channel MOSFET	Fairchild Semiconductor
FQPF8N50	9A N-Channel MOSFET	OuCan

Other Datasheets by AOKE

Part Number	Description
FQP8N60	600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability ■ ROHS product General Description This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.