| Part Number | FQPF8N60 Datasheet |
|---|---|
| Manufacturer | OuCan |
| Overview | Product Summary The FQP8N60 & FQPF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC appli. 50 5 TC=25°C Power Dissipation B Derate above 25oC PD 208 1.67 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-. |
FQPF8N60 Datasheet and Specifications PDF
The FQPF8N60 is a 8A N-Channel MOSFET.
| Part Number | FQPF8N60 Datasheet |
|---|---|
| Description | N-Channel Mosfet Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FQPF8N60
·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-.
*Drain Current *ID= 7.5A@ TC=25℃ *Drain Source Voltage- : VDSS= 600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) *Avalanche Energy Specified *Fast Switching *Simple Drive Requirements *DESCRITION *Designed for high efficiency switch mode power supply. *ABSOLUTE MAXIMUM RATINGS(Ta. |
| Part Number | FQPF8N60 Datasheet |
|---|---|
| Description | 600V N-Channel MOSFET |
| Manufacturer | AOKE |
| Overview |
This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche ch.
* 7.5A,600V,RDS(on)=1.0Ω@VGS=10V * Low gate charge * Low Crss (typical 23pF) * Fast switching * 100% AvalancheTested * Improved dv/dt capability * ROHS product General Description This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been esp. |