FQPF8N60C Overview
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A
- Low Gate Charge (Typ. 28 nC)
- Low Crss (Typ. 12 pF)
- 100% Avalanche Tested D GDS G TO-220F
