Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
Features
- 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max. ) @ VGS = 10 V, ID = 3.75 A.
- Low Gate Charge (Typ. 28 nC).
- Low Crss (Typ. 12 pF).
- 100% Avalanche Tested
D
GDS
G
TO-220F
Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanc.
FQPF8N60C Datasheet
