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FQT4N25TF - N-Channel MOSFET

Key Features

  • This N-Channel enhancement mode power MOSFET is.
  • 0.83 A, 250 V, RDS(on)=1.75 Ω(Max. )@VGS=10 V, ID=0.415 A produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to.
  • Low Gate Charge (Typ. 4.3 nC).
  • Low Crss (Typ. 4.8 pF) reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mod.

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FQT4N25TF N-Channel MOSFET FQT4N25TF N-Channel QFET® MOSFET 250 V, 0.83 A, 1.75 Ω December 2015 Description Features This N-Channel enhancement mode power MOSFET is • 0.83 A, 250 V, RDS(on)=1.75 Ω(Max.)@VGS=10 V, ID=0.415 A produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to • Low Gate Charge (Typ. 4.3 nC) • Low Crss (Typ. 4.8 pF) reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.