Datasheet Summary
FQT4N25TF N-Channel MOSFET
N-Channel QFET® MOSFET
250 V, 0.83 A, 1.75 Ω
December 2015
Description
Features
This N-Channel enhancement mode power MOSFET is
- 0.83 A, 250 V, RDS(on)=1.75 Ω(Max.)@VGS=10 V, ID=0.415 A produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
- Low Gate Charge (Typ. 4.3 nC)
- Low Crss (Typ. 4.8 pF) reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
G...