FQT4N25TF mosfet equivalent, n-channel mosfet.
This N-Channel enhancement mode power MOSFET is
* 0.83 A, 250 V, RDS(on)=1.75 Ω(Max.)@VGS=10 V, ID=0.415 A
produced using Fairchild Semiconductor®’s proprietary pla.
Features
This N-Channel enhancement mode power MOSFET is
* 0.83 A, 250 V, RDS(on)=1.75 Ω(Max.)@VGS=10 V, ID=0.415 A
produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has be.
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