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FQT4N20L - N-Channel MOSFET

Key Features

  • This N-Channel enhancement mode power MOSFET is.
  • 0.85 A, 200 V, RDS(on)=1.35 Ω(Typ. )@VGS=10 V, ID=0.425 A produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to.
  • Low Gate Charge (Typ. 4 nC).
  • Low Crss (Typ. 6 pF) reduce on-state resistance, and to provide superior.
  • 100% Avalanche Tested switching performance and high avalanche energy.
  • Low Level Gate.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQT4N20L N-Channel MOSFET FQT4N20L N-Channel QFET® MOSFET 200 V, 0.85 A, 1.40 Ω March 2013 Description Features This N-Channel enhancement mode power MOSFET is • 0.85 A, 200 V, RDS(on)=1.35 Ω(Typ.)@VGS=10 V, ID=0.425 A produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to • Low Gate Charge (Typ. 4 nC) • Low Crss (Typ. 6 pF) reduce on-state resistance, and to provide superior • 100% Avalanche Tested switching performance and high avalanche energy • Low Level Gate Drive Requirments Allowing Direct Operation strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and From Logic Drives electronic lamp ballasts.