FQT4N20L Description
Features This N-Channel enhancement mode power MOSFET is 0.85 A, 200 V, RDS(on)=1.35 Ω(Typ.)@VGS=10 V, ID=0.425 A produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to Low Gate Charge (Typ. 6 pF) reduce on-state resistance, and to provide superior 100% Avalanche Tested switching performance and high avalanche energy...
FQT4N20L Key Features
- 0.85 A, 200 V, RDS(on)=1.35 Ω(Typ.)@VGS=10 V, ID=0.425 A
- Low Gate Charge (Typ. 4 nC)
- Low Crss (Typ. 6 pF)
- 100% Avalanche Tested
- Low Level Gate Drive Requirments Allowing Direct Operation