FQT4N25TF Overview
Features This N-Channel enhancement mode power MOSFET is 0.83 A, 250 V, RDS(on)=1.75 Ω(Max.)@VGS=10 V, ID=0.415 A produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to Low Gate Charge (Typ. 4.8 pF) reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
FQT4N25TF Key Features
- 0.83 A, 250 V, RDS(on)=1.75 Ω(Max.)@VGS=10 V, ID=0.415 A
- Low Gate Charge (Typ. 4.3 nC)
- Low Crss (Typ. 4.8 pF)