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FQT4N25TF - N-Channel MOSFET

Datasheet Summary

Features

  • This N-Channel enhancement mode power MOSFET is.
  • 0.83 A, 250 V, RDS(on)=1.75 Ω(Max. )@VGS=10 V, ID=0.415 A produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to.
  • Low Gate Charge (Typ. 4.3 nC).
  • Low Crss (Typ. 4.8 pF) reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mod.

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Datasheet Details

Part number FQT4N25TF
Manufacturer Fairchild Semiconductor
File Size 721.56 KB
Description N-Channel MOSFET
Datasheet download datasheet FQT4N25TF Datasheet
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Full PDF Text Transcription

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FQT4N25TF N-Channel MOSFET FQT4N25TF N-Channel QFET® MOSFET 250 V, 0.83 A, 1.75 Ω December 2015 Description Features This N-Channel enhancement mode power MOSFET is • 0.83 A, 250 V, RDS(on)=1.75 Ω(Max.)@VGS=10 V, ID=0.415 A produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to • Low Gate Charge (Typ. 4.3 nC) • Low Crss (Typ. 4.8 pF) reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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