FQU1N60C - 600V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQU1N60C
Manufacturer	Fairchild Semiconductor
File Size	772.41 KB
Description	600V N-Channel MOSFET
Datasheet	FQU1N60C-FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

1 A, 600 V, RDS(on) = 11.5 Ω (Max. ) @ VGS = 10 V, ID = 0.5 A.
Low Gate Charge (Typ. 4.8 nC).
Low Crss (Typ. 3.5 pF).
100% Avalanche Tested.
RoHS Compliant D G S D-PAK G D S I-PAK G! D !.
◀▲.
! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulse.

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Published: May 28, 2014 |