Datasheet Details
| Part number | FQU1N60C |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 772.41 KB |
| Description | 600V N-Channel MOSFET |
| Datasheet |
 FQU1N60C Datasheet
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General Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
Key Features
- 1 A, 600 V, RDS(on) = 11.5 Ω (Max. ) @ VGS = 10 V, ID = 0.5 A.
- Low Gate Charge (Typ. 4.8 nC).
- Low Crss (Typ. 3.5 pF).
- 100% Avalanche Tested.
- RoHS Compliant D G S D-PAK G D S I-PAK G! D !.
- ◀▲.
- ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulse.
