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Fairchild Semiconductor Electronic Components Datasheet

FSB50825A Datasheet

Motion SPM 5 Series

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FSB50825A
Motion SPM® 5 Series
April 2015
Features
• UL Certified No. E209204 (UL1557)
• 250 V RDS(on) = 0.45 MaxFRFET MOSFET 3-
Phase Inverter with Gate Drivers and Protection
• Built-in Bootstrap Diodes Simplify PCB Layout
• Separate Open-Source Pins from Low-Side MOSFETs
for Three-Phase Current-Sensing
• Active-HIGH Interface, Works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• Optimized for Low Electromagnetic Interference
• HVIC Temperature-Sensing Built-in for Temperature
Monitoring
• HVIC for Gate Driving and Under-Voltage Protection
• Isolation Rating: 1500 Vrms / 1 min.
• RoHS Compliant
Applications
• 3-Phase Inverter Driver for Small Power AC Motor
Drives
Related Source
RD-FSB50450A - Reference Design for Motion SPM 5
Series Ver.2
• AN-9082 - Motion SPM5 Series Thermal Performance
by Contact Pressure
• AN-9080 - User’s Guide for Motion SPM 5 Series V2
General Description
The FSB50825A is an advanced Motion SPM® 5 module
providing a fully-featured, high-performance inverter
output stage for AC Induction, BLDC and PMSM motors.
These modules integrate optimized gate drive of
the built-in MOSFETs(FRFET® technology) to minimize
EMI and losses, while also providing multiple on-module
protection features including under-voltage lockouts and
thermal monitoring. The built-in high-speed
HVIC requires only a single supply voltage and
translates the incoming logic-level gate inputs to the
high-voltage, high-current drive signals required to
properly drive the module's internal MOSFETs.
Separate open-source MOSFET terminals are available
for each phase to support the widest variety of control
algorithms.
Package Marking & Ordering Information
Device Marking
FSB50825A
Device
FSB50825A
Package
SPM5P-023
Reel Size
-
Packing Type
Rail
Quantity
15
©2012 Fairchild Semiconductor Corporation
FSB50825A Rev. 1.1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FSB50825A Datasheet

Motion SPM 5 Series

No Preview Available !

Absolute Maximum Ratings
Inverter Part (each MOSFET unless otherwise specified.)
Symbol
Parameter
Conditions
VDSS
*ID 25
*ID 80
*IDP
*IDRMS
*PD
Drain-Source Voltage of Each MOSFET
Each MOSFET Drain Current, Continuous TC = 25°C
Each MOSFET Drain Current, Continuous TC = 80°C
Each MOSFET Drain Current, Peak
TC = 25°C, PW < 100 s
Each MOSFET Drain Current, Rms
TC = 80°C, FPWM < 20 kHz
Maximum Power Dissipation
TC = 25°C, For Each MOSFET
Rating
250
3.6
2.7
9.0
1.9
14.2
Control Part (each HVIC unless otherwise specified.)
Symbol
Parameter
Conditions
VCC Control Supply Voltage
VBS High-side Bias Voltage
VIN Input Signal Voltage
Applied Between VCC and COM
Applied Between VB and VS
Applied Between IN and COM
Rating
20
20
-0.3 ~ VCC + 0.3
Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)
Symbol
Parameter
Conditions
VRRMB Maximum Repetitive Reverse Voltage
* IFB
* IFPB
Forward Current
Forward Current (Peak)
TC = 25°C
TC = 25°C, Under 1ms Pulse Width
Rating
250
0.5
1.5
Thermal Resistance
Symbol
Parameter
RJC
Junction to Case Thermal Resistance
Conditions
Each MOSFET under Inverter Oper-
ating Condition (1st Note 1)
Rating
8.8
Total System
Symbol
Parameter
TJ
TSTG
Operating Junction Temperature
Storage Temperature
VISO
Isolation Voltage
Conditions
60 Hz, Sinusoidal, 1 Minute, Con-
nect Pins to Heat Sink Plate
Rating
-40 ~ 150
-40 ~ 125
1500
1st Notes:
1. For the measurement point of case temperature TC, please refer to Figure 4.
2. Marking “ * “ is calculation value or design factor.
Unit
V
A
A
A
Arms
W
Unit
V
V
V
Unit
V
A
A
Unit
°C/W
Unit
°C
°C
Vrms
©2012 Fairchild Semiconductor Corporation
FSB50825A Rev. 1.1
2
www.fairchildsemi.com


Part Number FSB50825A
Description Motion SPM 5 Series
Maker Fairchild Semiconductor
Total Page 10 Pages
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