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FSGL130R - Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

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Fairchild Semiconductor

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FSGL130R Radiation Hardened / SEGR Resistant N-Channel Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – FSGL130R

Datasheet Details

Part number	FSGL130R
Manufacturer	Fairchild Semiconductor
File Size	217.67 KB
Description	Radiation Hardened / SEGR Resistant N-Channel Power MOSFET
Datasheet	FSGL130R Datasheet
Additional preview pages of the FSGL130R datasheet.

Product details

Features

12.
A, 100V, rDS(ON) = 0.080Ω.
UIS Rated.
Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS.
Photo Current - 1.5nA Per-RAD (Si)/s Typically.
Neutron - Maintain Pre-RAD.

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Published: Jan 21, 2009 |