FSGL130R Datasheet Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

Manufacturer: Fairchild (now onsemi)

FSGL130R radiation hardened / segr resistant n-channel power mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FSGL130R
Manufacturer	Fairchild (now onsemi)
File Size	217.67 KB
Description	Radiation Hardened / SEGR Resistant N-Channel Power MOSFET
Download	FSGL130R Download (PDF)

Overview

FSGL130R Data Sheet www.DataSheet4U.com July 2001 File Number 4921 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle bjec tho yw s () eato OCI O mar Fairchild Star*Power™ Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.

Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems.

Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for Single Event Effects (SEE) which the Fairchild FS families have always featured.

Key Features

12.
A, 100V, rDS(ON) = 0.080Ω.
UIS Rated.
Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS.
Photo Current - 1.5nA Per-RAD (Si)/s Typically.
Neutron - Maintain Pre-RAD.

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