H11D1 Overview
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
H11D1 Key Features
- High Voltage
- H11D1, H11D2, BVCER = 300 V
- H11D3, H11D4, BVCER = 200 V
- High isolation voltage
- 5300 VAC RMS
- 1 minute
- 7500 VAC PEAK
- 1 minute
- Underwriters Laboratory (UL) recognized File# E90700
