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H11D1M

6-Pin DIP High Voltage Phototransistor Optocouplers

Image Manufacturer B2B MPN Description Distributor Stock Quantity Price Buy Now
Distributor onsemi H11D1M OPTOISO 4.17KV TRANS W/BASE 6DIP DigiKey 57 25000 units
$0.29

H11D1M Datasheet (334.62 KB)

Preview of H11D1M PDF Datasheet

Datasheet Details

Part number:

H11D1M

Manufacturer:

ON Semiconductor ↗

File Size:

334.62 KB

Description:

6-pin dip high voltage phototransistor optocouplers

H11D1M Features

* High Voltage:

* MOC8204M, BVCEO = 400 V

* H11D1M, BVCEO = 300 V

* H11D3M, BVCEO = 200 V

* Safety and Regulatory Approvals:

* UL1577, 4,170 VACRMS for 1 Minute

* DIN

* EN/IEC60747

* 5

* 5, 850 V Peak Working Insulation Voltag

H11D1M General Description

The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor

*type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six

*pin dual

*in

*line pa.

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H11D1M 6-Pin DIP High Voltage Phototransistor Optocouplers ON Semiconductor

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