H11D1M Datasheet (ON Semiconductor) - 6-Pin DIP High Voltage Phototransistor Optocouplers

H11D1M, 6-Pin DIP High Voltage Phototransistor Optocouplers

The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor *type optically coupled optoisolators.

A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor.

The device is supplied in a standard plastic six *pin dual *in *line pa

H11D1M Features

* High Voltage:

* MOC8204M, BVCEO = 400 V

* H11D1M, BVCEO = 300 V

* H11D3M, BVCEO = 200 V

* Safety and Regulatory Approvals:

* UL1577, 4,170 VACRMS for 1 Minute

* DIN

* EN/IEC60747

* 5

* 5, 850 V Peak Working Insulation Voltag