Datasheet Details
Part number:
H11F1M
Manufacturer:
File Size:
328.08 KB
Description:
Photo FET Optocouplers
Features
* As a Remote Variable Resistor:
* ≤ 100 W to ≥ 300 MW
* ≤15 pF Shunt Capacitance
* ≥100 GW I/O Isolation Resistance
* As an Analog Switch:
* Extremely Low Offset Voltage
* 60 Vpk
* pk Signal Capability
* No Charge Injection or La
H11F1M, Photo FET Optocouplers
The H11FXM series consists of a Gallium *Aluminum *Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo *detector.
The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion *free control o
H11F1M Distributor
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