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H11D3M, H11D1M Datasheet - ON Semiconductor

H11D3M 6-Pin DIP High Voltage Phototransistor Optocouplers

The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor *type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six *pin dual *in *line pa.

H11D3M Features

* High Voltage:

* MOC8204M, BVCEO = 400 V

* H11D1M, BVCEO = 300 V

* H11D3M, BVCEO = 200 V

* Safety and Regulatory Approvals:

* UL1577, 4,170 VACRMS for 1 Minute

* DIN

* EN/IEC60747

* 5

* 5, 850 V Peak Working Insulation Voltag

H11D1M-ONSemiconductor.pdf

This datasheet PDF includes multiple part numbers: H11D3M, H11D1M. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

H11D3M, H11D1M

Manufacturer:

ON Semiconductor ↗

File Size:

334.62 KB

Description:

6-pin dip high voltage phototransistor optocouplers.

Note:

This datasheet PDF includes multiple part numbers: H11D3M, H11D1M.
Please refer to the document for exact specifications by model.

H11D3M Distributor

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H11D3M H11D1M 6-Pin DIP High Voltage Phototransistor Optocouplers ON Semiconductor