Datasheet Details
Part number:
H11D3M, H11D1M
Manufacturer:
File Size:
334.62 KB
Description:
6-pin dip high voltage phototransistor optocouplers.
Note:
This datasheet PDF includes multiple part numbers: H11D3M, H11D1M.
Please refer to the document for exact specifications by model.
H11D3M, H11D1M, 6-Pin DIP High Voltage Phototransistor Optocouplers
The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor *type optically coupled optoisolators.
A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor.
The device is supplied in a standard plastic six *pin dual *in *line pa
H11D3M Features
* High Voltage:
* MOC8204M, BVCEO = 400 V
* H11D1M, BVCEO = 300 V
* H11D3M, BVCEO = 200 V
* Safety and Regulatory Approvals:
* UL1577, 4,170 VACRMS for 1 Minute
* DIN
* EN/IEC60747
* 5
* 5, 850 V Peak Working Insulation Voltag
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