H11F2M Datasheet - ON Semiconductor

H11F2M Photo FET Optocouplers

The H11FXM series consists of a Gallium *Aluminum *Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo *detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion *free control o.

H11F2M Features

* As a Remote Variable Resistor:

* ≤ 100 W to ≥ 300 MW

* ≤15 pF Shunt Capacitance

* ≥100 GW I/O Isolation Resistance

* As an Analog Switch:

* Extremely Low Offset Voltage

* 60 Vpk

* pk Signal Capability

* No Charge Injection or La

H11F2M Datasheet (328.08 KB)