H11F1 Datasheet (Fairchild Semiconductor)

H11F1, PHOTO FET OPTOCOUPLERS

The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector.

The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signal

H11F1 Features

* As a remote variable resistor

* ≤ 100Ω to ≥ 300 MΩ

* ≥ 99.9% linearity

* ≤ 15 pF shunt capacitance

* ≥ 100 GΩ I/O isolation resistance As an analog switch

* Extremely low offset voltage

* 60 Vpk-pk signal capability

* No charge injection or lat