H21A5 Datasheet | Fairchild Semiconductor

DESCRIPTION The H21A series are gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON” to an “OFF” state. FEATURES - Opaque housing - Low cost - .035” apertures - High IC(ON)  2001 Fairchild Semiconductor Corporation DS300291 6/05/01 1 OF 4 .fairchildsemi. PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH H21A4 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3 and 4) Soldering Temperature (Flow)(2 and 3) INPUT (EMITTER) Continuous Forward Current Reverse Voltage Power Dissipation (1) OUTPUT (SENSOR) Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation (TC = 25°C)(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO IC PD Rating -55 to +100 -55 to +100 240 for 5 sec 260 for 10 sec 50 6 100 55 4.5 20 150 Unit °C °C °C °C m A V m W V V m A m W H21A6 NOTE: 1. Derate power dissipation linearly 1.67 m W/°C above 25°C. 2. RMA flux is remended. 3. Methanol or isopropyl alcohols are remended as cleaning agents. 4. Soldering iron tip 1/16” (1.6mm) minimum from housing. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25°C) (All measurements made under pulse conditions) SYMBOL DEVICES MIN TYP MAX UNITS INPUT (EMITTER) Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current OUTPUT (SENSOR) Emitter to Collector Breakdown Collector to Emitter Breakdown Collector to Emitter Leakage COUPLED IF = 60 m A IR = 10 µA VR = 3 V IF = 100 µA, Ee = 0 IC = 1 m A, Ee = 0 VCE = 45 V, Ee = 0 IF = 5 m A, VCE = 5 V VF VR IR BVECO BVCEO ICEO All All All All All All H21A4 H21A5 H21A6 H21A4 H21A5 H21A6 H21A4 H21A5 H21A6...