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HGT1S20N35G3VLS Datasheet, Fairchild Semiconductor

HGT1S20N35G3VLS Datasheet, Fairchild Semiconductor

HGT1S20N35G3VLS

datasheet Download (Size : 209.49KB)

HGT1S20N35G3VLS Datasheet

HGT1S20N35G3VLS igbt equivalent, n-channel igbt.

HGT1S20N35G3VLS

datasheet Download (Size : 209.49KB)

HGT1S20N35G3VLS Datasheet

Features and benefits


* Logic Level Gate Drive
* Internal Voltage Clamp
* ESD Gate Protection
* TJ = 175oC
* Ignition Energy Capable Description This N-Channel IGBT is a M.

Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Cla.

Image gallery

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TAGS

HGT1S20N35G3VLS
N-Channel
IGBT
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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