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HGTP14N41G3VLS - N-Channel IGBT

Download the HGTP14N41G3VLS datasheet PDF. This datasheet also covers the HGTP14N41G3VL variant, as both devices belong to the same n-channel igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit Formerly Developmental Type TA49360. Features.
  • Ignition Energy = 340mJ at TJ (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HGTP14N41G3VL_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (onsemi)

Part Number Description
HGTP14N41G3VL N-Channel IGBT
HGTP14N40F3VL N-Channel IGBT
HGTP14N36G3VL N-Channel IGBT
HGTP14N37G3VL N-Channel IGBT
HGTP10N120BN N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet December 2001 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit Formerly Developmental Type TA49360.
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