HGTP3N60A4D Datasheet | Fairchild Semiconductor

HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices bining the best Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT used is the development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49329. Features - >100k Hz Operation At 390V, 3A - 200k Hz Operation At 390V, 2.5A - 600V Switching SOA Capability - Typical Fall Time - - - . . 70ns at TJ = 125o C - Low Conduction Loss - Temperature pensating SABER™ Model .Fairchildsemi. Packaging JEDEC TO-263AB COLLECTOR (FLANGE) Ordering Information PART NUMBER HGT1S3N60A4DS HGTP3N60A4D PACKAGE TO-263AB TO-220AB BRAND 3N60A4D 3N60A4D JEDEC TO-220AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A. Symbol C COLLECTOR (FLANGE) Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D...