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HUF75631S3S - MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve Ordering Information PART NUMBER HUF75631S3ST.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet October 2013 HUF75631S3S N-Channel UltraFET Power MOSFET 100 V, 33 A, 40 mΩ Packaging JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE Symbol D G S Features • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve Ordering Information PART NUMBER HUF75631S3ST PACKAGE TO-263AB BRAND 75631S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75631S3ST UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . .