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HUF76633P3_F085 - Power MOSFET

Key Features

  • Ultra Low On-Resistance - rDS(ON) = 0.035Ω, VGS = 10V - rDS(ON) = 0.036Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. Fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Switching Time vs RGS Curves.
  • Qualified to AEC Q101.
  • RoHS Compliant Ordering Information PART NUMBER HUF76633P3_F085.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet HUF76633P3_F085 April 2012 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE) D G S Features • Ultra Low On-Resistance - rDS(ON) = 0.035Ω, VGS = 10V - rDS(ON) = 0.036Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.Fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves • Qualified to AEC Q101 • RoHS Compliant Ordering Information PART NUMBER HUF76633P3_F085 PACKAGE TO-220AB BRAND 76633P Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Ratings Units Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . .