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Fairchild Semiconductor Electronic Components Datasheet

HUFA75307T3ST Datasheet

2.6A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFET

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Data Sheet
HUFA75307T3ST
December 2001
2.6A, 55V, 0.090 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET® process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75307.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75307T3ST SOT-223
5307
NOTE: HUFA75307T3ST is available only in tape and reel.
Features
• 2.6A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.090
• Diode Exhibits Both High Speed and Soft Recovery
• Temperature Compensating PSPICE® Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
GATE
DRAIN
SOURCE
SOT-223
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75307T3ST Rev. B


Fairchild Semiconductor Electronic Components Datasheet

HUFA75307T3ST Datasheet

2.6A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFET

No Preview Available !

HUFA75307T3ST
Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
55
55
±20V
V
V
V
Continuous (Figure 2) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
2.6
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Figure 5
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Figures 6, 14, 15
Power Dissipation (Note 2)
Derate Above 25oC . . . .
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PD
..
1.1
9.09
W
mW/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TA = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(10)
Qg(TH)
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 10)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TA = 150oC
VGS = ±20V
ID = 2.6A, VGS = 10V) (Figure 9)
VDD = 30V, ID 2.6A,
RL = 11.5, VGS = 10V,
RGS = 25
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID 2.6A,
RL = 11.5
Ig(REF) = 1.0mA
(Figure 13)
Gate to Source Gate Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
RθJA
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Pad Area = 0.171 in2 (see note 2)
Pad Area = 0.068 in2
Pad Area = 0.026 in2
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
VSD
ISD = 2.6A
Reverse Recovery Time
trr ISD = 2.6A, dISD/dt = 100A/µs
Reverse Recovered Charge
QRR
ISD = 2.6A, dISD/dt = 100A/µs
NOTE:
2. 110 oC/W measured using FR-4 board with 0.171in2 footprint for 1000s.
MIN TYP MAX UNITS
55 - - V
2 - 4V
- - 1 µA
- - 250 µA
- - 100 nA
-
0.070 0.090
- - 55 ns
- 5 - ns
- 30 - ns
- 35 - ns
- 25 - ns
- - 90 ns
- 14 17 nC
- 8.3 10 nC
- 0.6 0.8 nC
- 1.00 -
nC
- 4.00 -
nC
- 250 -
pF
- 115 -
pF
- 30 - pF
- - 110 oC/W
- - 128 oC/W
- - 147 oC/W
MIN TYP MAX UNITS
- - 1.25 V
- - 40 ns
- - 50 nC
©2001 Fairchild Semiconductor Corporation
HUFA75307T3ST Rev. B


Part Number HUFA75307T3ST
Description 2.6A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFET
Maker Fairchild Semiconductor
Total Page 9 Pages
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