HUFA75307T3ST Description
HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low...
HUFA75307T3ST Key Features
- 2.6A, 55V
- Ultra Low On-Resistance, rDS(ON) = 0.090Ω
- Diode Exhibits Both High Speed and Soft Recovery
- Temperature pensating PSPICE® Model
- Thermal Impedance SPICE Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”