HUFA75309D3 Datasheet | Fairchild Semiconductor

HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel Ultra FET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative Ultra FET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75309. Features - 19A, 55V - Simulation Models - Temperature pensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: .fairchildsemi. - Peak Current vs Pulse Width Curve - UIS Rating Curve - Related Literature - TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards” Symbol Ordering Information PART NUMBER HUFA75309P3 HUFA75309D3 HUFA75309D3S PACKAGE TO-220AB TO-251AA TO-252AA BRAND 75309P 75309D 75309D NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUFA75309D3ST. Packaging JEDEC STYLE TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-251AA SOURCE DRAIN GATE JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://.aecouncil./ Reliability data can be found at: http://.fairchildsemi./products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2001 Fairchild...