HUFA76413DK8T mosfet equivalent, n-channel mosfet.
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* 150°C Maximum Junction Temperature UIS Capability (Single Pulse and Repetitive Pulse) Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V Ultra-Lo.
where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, l.
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withst.
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