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HUFA76413DK8T - N-Channel MOSFET

Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.

This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance.

Features

  • 150°C Maximum Junction Temperature UIS Capability (Single Pulse and Repetitive Pulse) Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V Ultra-Low On-Resistance rDS(ON) = 0.056Ω, VGS = 5V D1 (8) D1 (7) D2 (6) D2 (5) 1 SO-8 S1 (1) G1 (2) S2 (3) G2 (4) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HUFA76413DK8T January 2003 HUFA76413DK8T N-Channel Logic Level UltraFET® Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
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