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IRFN214B Datasheet 250v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: .. IRFN214B IRFN214B 250V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for electronic lamp ballast.

Key Features

  • 0.6A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " TO-92 IRFN Series GDS ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TA = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TA = 25°C) Drain Current - Continuous (TA = 70°C) Drain Current.

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IRFN214B Distributor