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IRFN214B - 250V N-Channel MOSFET

IRFN214B Description

www.DataSheet4U.com IRFN214B IRFN214B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFN214B Features

* 0.6A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " TO-92 IRFN Series GDS ! S Absolute Maximum Ratings S

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250V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFN214B-like datasheet