*
*
*
*
*
* 0.6A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche test.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.

IRFN240

IRFN240SMD

IRFN250

IRFN250SMD

IRFN044

IRFN044SMD

IRFN054

IRFN054SMD

IRFN130SMD

IRFN140

IRFN140SMD

IRFN150

IRFN150SMD