IRFR110 Description
Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers,...
IRFR110 Key Features
- 4.7A, 100V
- rDS(ON) = 0.540Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- 175oC Operating Temperature
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”