* 4.7A, 100V
* rDS(ON) = 0.540Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* 175oC Operating Temperature
* Rel
IRFU110
Fairchild Semiconductor
95.15 KB
N-channel power mosfets.
Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field.
📁 Related Datasheet
IRFU110 N-Channel Power MOSFETs (Intersil Corporation)
IRFU110 Power MOSFET (Vishay Siliconix)
IRFU110 Power MOSFET (International Rectifier)
IRFU110A Power MOSFET (Samsung)
IRFU1010Z AUTOMOTIVE MOSFET (International Rectifier)
IRFU1010Z N-Channel MOSFET (INCHANGE)
IRFU1010ZPBF AUTOMOTIVE MOSFET (International Rectifier)
IRFU1018E N-Channel MOSFET (INCHANGE)
IRFU1018EPbF Power MOSFET (International Rectifier)
IRFU120 POWER MOSFET (International Rectifier)
