IRFU110 Datasheet N-Channel Power MOSFETs

Manufacturer: Fairchild (now onsemi)

Download the IRFU110 datasheet PDF. This datasheet also includes the IRFR110 variant, as both parts are published together in a single manufacturer document.

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IRFU110 n-channel power mosfets by Fairchild (now onsemi) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRFR110-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRFU110
Manufacturer	Fairchild (now onsemi)
File Size	95.15 KB
Description	N-Channel Power MOSFETs
Datasheet	IRFU110 Datasheet

Overview

Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

These advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power.

These transistors can be operated directly from integrated circuits.

Key Features

4.7A, 100V.
rDS(ON) = 0.540Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
175oC Operating Temperature.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-252AA GATE SOURCE DRAI.

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