IRFW530A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology
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IRFW/I530A
BVDSS = 100 V RDS(on) = 0.11 Ω ID = 14 A
D2-PAK
Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Ο
I2-PAK
Lower RDS(ON) : 0.092 Ω(Typ.)
1 1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C)
- Ο Ο Ο
Value 100 14 9.9
1 O
Units V A A V m J A m J V/ns W W W/ C
Ο
56 + _ 20 261 14 5.5 6.5 3.8 55 0.36
- 55 to +175
O 1 O 1 O 3 O
Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for...
