| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com IRFW/I530A BVDSS = 100 V RDS(on) = 0.11 Ω ID = 14 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Ο I2-PAK Lower RDS(ON) : 0.092 Ω(Typ.) 1 1 3 2 3 1. Gate 2. Drain 3. Sou... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology
www.DataSheet4U.com
IRFW/I530A
BVDSS = 100 V RDS(on) = 0.11 Ω ID = 14 A
D2-PAK
2
Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Ο
I2-PAK
Lower RDS(ON) : 0.092 Ω(Typ.)
1 1 3 2 3
1. G...
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| Datasheet |
 IRFW530A Datasheet - 302.13KB |
