IRFW610B - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	IRFW610B
Manufacturer	Fairchild Semiconductor
File Size	683.58 KB
Description	N-Channel MOSFET
Datasheet	IRFW610B Datasheet
Additional preview pages of the IRFW610B datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

3.3A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D2-PAK IRFW Series G D S I2-PAK IRFI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Cont.

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Published: Dec 2, 2013 |