IRFW614B Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: IRFW614B / IRFI614B November 2001 IRFW614B / IRFI614B 250V N-Channel.

Datasheet Details

Part number	IRFW614B
Manufacturer	Fairchild (now onsemi)
File Size	671.95 KB
Description	N-Channel MOSFET
Datasheet	IRFW614B_FairchildSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Key Features

2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
◀ ▲.
G! G S D2-PAK IRFW Series G D S I2-PAK IRFI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continu.

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