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Fairchild Semiconductor Electronic Components Datasheet

IRFW624A Datasheet

Power MOSFET

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$GYDQFHG 3RZHU 026)(7
IRFW/I624A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 250V
Low RDS(ON): 0.742(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 250 V
RDS(on) = 1.1
ID = 4.1 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
250
4.1
2.6
16
±30
84
4.1
4.9
4.8
3.1
49
0.39
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
2.54
40
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

IRFW624A Datasheet

Power MOSFET

No Preview Available !

IRFW/I624A
1&+$11(/
32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
250 -- -- V
-- 0.30 -- V/°C
2.0 -- 4.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 µA
-- -- 1.1
-- 2.69 --
-- 335 430
-- 55 65 pF
-- 23 28
-- 11 30
-- 12 35
ns
-- 32 75
-- 15 40
-- 14 20
-- 2.8 -- nC
-- 6.4 --
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=250V
VDS=200V,TC=125°C
VGS=10V,ID=2.05A (4)
VDS=40V,ID=2.05A (4)
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=125V,ID=4.1A,
RG=18
See Fig 13
(4) (5)
VDS=200V,VGS=10V,
ID=4.1A
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
(1) --
-- 4.1
Integral reverse pn-diode
A
-- 16
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=4.1A,VGS=0V
-- 135 -- ns TJ=25°C,IF=4.1A
-- 0.65 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=8mH, IAS=4.1A, VDD=50V, RG=27, Starting TJ =25°C
(3) ISD 4.1A, di/dt 170A/µs, VDD BVDSS , Starting TJ =25 °C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle 2%
(5) Essentially Independent of Operating Temperature


Part Number IRFW624A
Description Power MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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