IRFW654B Key Features
- 21A, 250V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 60 pF) Fast switching 100% av
- Part: IRFW654B
- Manufacturer: Fairchild (official site)
- Size: 693.47 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| IRFW650B | N-Channel MOSFET |
| IRFW610B | N-Channel MOSFET |
| IRFW614A | Power MOSFET |
| IRFW614B | N-Channel MOSFET |
| IRFW620A | Power MOSFET |
IRFW654B Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch...