IRFW730B Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic...
IRFW730B Key Features
- 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V
- Low gate charge ( typical 25 nC)
- Low Crss ( typical 20 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
