IRFW730B Key Features
- 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V
- Low gate charge ( typical 25 nC)
- Low Crss ( typical 20 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: IRFW730B
- Description: 400V N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 678.64 KB
Other IRFW730B Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor |
IRFW730A | Power MOSFET |