IRFW730B
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Key Features
- 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V
- Low gate charge ( typical 25 nC)
- Low Crss ( typical 20 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series
