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IRL630A Key Features
- Logic-Level Gate Drive
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 200V
- Lower RDS(ON): 0.335Ω (Typ.)
Other IRL630A Datasheets
| Manufacturer |
Part Number |
Description |
International Rectifier |
IRL630
|
POWER MOSFET |
Vishay |
IRL630
|
Power MOSFET |
|
International Rectifier |
IRL630PBF
|
HEXFET Power MOSFET |
|
International Rectifier |
IRL630S
|
POWER MOSFET |
|
Vishay |
IRL630S
|
Power MOSFET |
IRL630A Description
$GYDQFHG 3RZHU.
