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IRL630 - Power MOSFET

General Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt rating.
  • Repetitive avalanche rated Available.
  • Logic-level gate drive.
  • RDS(on) specified at VGS = 4 V and 5 V.
  • 150 °C operating temperature Available.
  • Fast switching.
  • Ease of paralleling.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note.
  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant.

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Datasheet Details

Part number IRL630
Manufacturer Vishay
File Size 1.13 MB
Description Power MOSFET
Datasheet download datasheet IRL630 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com IRL630 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 V VGS = 5 V 40 5.5 24 Single 0.40 FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated Available • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 150 °C operating temperature Available • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.