| Part Number | IRL630 Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 pa. ating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 9.0 5.7 36 74 0.59 ±10 250 9.0 7.4. |
IRL630 Datasheet and Specifications PDF
The IRL630 is a POWER MOSFET.
| Part Number | IRL630 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
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IRL630
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating.
* Logic-Level Gate Drive * Avalanche Rugged Technology * Rugged Gate Oxide Technology * Lower Input Capacitance * Improved Gate Charge * Extended Safe Operating Area * Lower Leakage Current: 10µA (Max.) @ VDS = 200V * Lower RDS(ON): 0.335Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS. |
| Part Number | IRL630 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is.
* Dynamic dV/dt rating * Repetitive avalanche rated Available * Logic-level gate drive * RDS(on) specified at VGS = 4 V and 5 V * 150 °C operating temperature Available * Fast switching * Ease of paralleling * Material categorization: for definitions of compliance please see . |