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ISL9N315AD3ST - N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

This page provides the datasheet information for the ISL9N315AD3ST, a member of the ISL9N315AD3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs family.

Description

This device employs a new advanced trench MOSFET technology and

Features

  • low gate charge while maintaining low on-resistance. Optimized for switching.

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Datasheet Details

Part number ISL9N315AD3ST
Manufacturer Fairchild Semiconductor
File Size 263.35 KB
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Datasheet download datasheet ISL9N315AD3ST Datasheet
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ISL9N315AD3 / ISL9N315AD3ST February 2003 ISL9N315AD3 / ISL9N315AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83337 Features • Fast switching • rDS(ON) = 0.012Ω (Typ), VGS = 10V • rDS(ON) = 0.022Ω (Typ), VGS = 4.5V • Qg (Typ) = 18nC, VGS = 5V • Qgd (Typ) = 3.
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