ISL9N315AD3
ISL9N315AD3 is N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs manufactured by Fairchild Semiconductor.
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This device employs a new advanced trench MOSFET technology and Features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Formerly developmental type 83337
Features
- Fast switching
- r DS(ON) = 0.012Ω (Typ), VGS = 10V
- r DS(ON) = 0.022Ω (Typ), VGS = 4.5V
- Qg (Typ) = 18n C, VGS = 5V
- Qgd (Typ) = 3.4n C
- CISS (Typ) = 900p F
Applications
- DC/DC converters
DRAIN (FLANGE)
DRAIN (FLANGE)
SOURCE DRAIN GATE G
GATE SOURCE
TO-252
TO-251
MOSFET Maximum Ratings TA=25°C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) ID Continuous (TC = 100o C, VGS = 4.5V) Continuous (TC = 25o C, VGS = 10V, RθJA= 52o C/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25o C Operating and Storage Temperature 30 23 10 Figure 4 55 0.37 -55 to 175 A A A A W W/o C o
Ratings 30 ±20
Units V V
Thermal Characteristics
Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-251, TO-252 Thermal Resistance Junction to Ambient TO-251, TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 2.73 100 52 o o o
C/W C/W C/W
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Package Marking and Ordering Information
Device Marking N315AD N315AD Device ISL9N315AD3ST ISL9N315AD3 Package TO-252AA TO-251AA Reel Size 330mm Tube Tape Width 16mm N/A Quantity 2500 units 75 units
©2003 Fairchild Semiconductor Corporation
ISL9N315AD3/ISL9N315AD3ST Rev....
