ISL9N315AD3ST Datasheet | Fairchild Semiconductor

Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83337 Features - Fast switching - r DS(ON) = 0.012Ω (Typ), VGS = 10V - r DS(ON) = 0.022Ω (Typ), VGS = 4.5V - Qg (Typ) = 18n C, VGS = 5V - Qgd (Typ) = 3.4n C - CISS (Typ) = 900p F Applications - DC/DC converters DRAIN (FLANGE) DRAIN (FLANGE) SOURCE DRAIN GATE G GATE SOURCE TO-252 TO-251 MOSFET Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) ID Continuous (TC = 100o C, VGS = 4.5V) Continuous (TC = 25o C, VGS = 10V, RθJA= 52o C/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25o C Operating and Storage Temperature 30 23 10 Figure 4 55 0.37 -55 to 175 A A A A W W/o C o Ratings 30 ±20 Units V V Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-251, TO-252 Thermal Resistance Junction to Ambient TO-251, TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 2.73 100 52 o o o C/W C/W C/W .. Package Marking and Ordering Information Device Marking N315AD N315AD Device ISL9N315AD3ST ISL9N315AD3 Package TO-252AA TO-251AA Reel Size 330mm Tube Tape Width 16mm N/A Quantity 2500 units 75 units ©2003 Fairchild Semiconductor Corporation ISL9N315AD3/ISL9N315AD3ST Rev. A1 ISL9N315AD3 / ISL9N315AD3ST Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V VGS = ±20V TC = 150o C 30 1 250 ±100 V µA n A On Characteristics VGS(TH) r DS(ON) Gate to Source...