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Fairchild Semiconductor Electronic Components Datasheet

KSD363 Datasheet

NPN Transistor

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KSD363
B/W TV Horizontal Deflection Output
• Collector-Base Voltage : VCBO=300V
• Collector Current : IC=6A
• Collector Dissipation : PC=40W(TC=25°C)
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
300
120
8
6
40
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
VBE(sat)
fT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
IC =1mA, IE = 0
IC = 20mA, IB = 0
IE = 1mA, IC = 0
VCB = 250V, IE = 0
VCE = 5V, IC = 1A
IC = 1A, IB = 0.1A
IC = 1A, IB = 0.1A
VCE = 5V, IC = 0.5A
Min.
300
120
8
40
Typ.
10
Max.
1
240
1
1.5
Units
V
V
V
mA
V
V
MHz
hFE Classification
Classification
hFE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000


Fairchild Semiconductor Electronic Components Datasheet

KSD363 Datasheet

NPN Transistor

No Preview Available !

Typical Characteristics
5
4
I = 50mA
B
IB
=
IB
45mA
= 40mA
IB = 35mA
3
I = 30mA
B
I = 25mA
B
2 IB = 20mA
I = 15mA
B
1 IB = 10mA
I = 5mA
B
0
0 4 8 12 16 20
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 1. Static Characteristic
10
1 VBE(sat)
I = 10 I
CB
0.1
VCE(sat)
0.01
0.01
0.1 1
IC[A], COLLECTOR CURRENT
10
Figure 3. Base-Emitter Saturation Voltage
Collect-Emitter Saturation Voltage
15
10
5
5mAp-p
0
0 50 100 150 200 250 300 350 400
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Safe Operating (On Horizonal
Deflection Output Circuit)
©2000 Fairchild Semiconductor International
1000
100
V = 5V
CE
10
0.01
0.1 1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
1000
100
f=1MHz
I =0
E
10
1
10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 4. Collector Output Capacitance
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
T [oC], CASE TEMPERATURE
C
Figure 6. Power Derating
Rev. A, February 2000


Part Number KSD363
Description NPN Transistor
Maker Fairchild Semiconductor
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KSD363 Datasheet PDF





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