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Fairchild Semiconductor Electronic Components Datasheet

KST5088 Datasheet

Low Noise Transistor

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KST5088/5089
Low Noise Transistor
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: KST5088
: KST5089
VCEO
Collector-Emitter Voltage
: KST5088
: KST5089
VEBO
IC
PC
TSTG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
35
30
30
25
4.5
50
350
150
Units
V
V
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage
: KST5088
: KST5089
IC=100µA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
: KST5088
: KST5089
IC=1mA, IB=0
ICBO
IEBO
hFE
Collector Cut-off Current
: KST5088
: KST5089
Emitter Cut-off Current
DC Current Gain
: KST5088
: KST5089
: KST5088
: KST5089
: KST5088
: KST5089
VCB=20V, IE=0
VCB=15V, IE=0
VEB=3V, IC=0
VCE=5V, IC=100µA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE(sat)
VBE(sat)
fT
Cob
NF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
: KST5088
: KST5089
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=5V, IC=500µA, f=20MHz
VCB=5V, IE=0, f=100KHz
IC=100µA, VCE=5V
RS=10K, f=10Hz to 15.7KHz
Min.
Max. Units
35 V
30 V
30 V
25 V
50 nA
50 nA
50 nA
300 900
400 1,200
350
450
300
400
0.5 V
0.8 V
50 MHz
4 pF
3 dB
2 dB
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002


Fairchild Semiconductor Electronic Components Datasheet

KST5088 Datasheet

Low Noise Transistor

No Preview Available !

Marking Code
Type
Mark
KST5088
1Q
Marking
1Q
KST5089
1R
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002


Part Number KST5088
Description Low Noise Transistor
Maker Fairchild Semiconductor
Total Page 5 Pages
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