MBR2545CT Datasheet | Fairchild Semiconductor

Features - Low Power Loss, High Efficiency - High Surge Capacity - Metal Silicon Junction, Majority Carrier Conduction PIN1 - High Current Capacity, Low Forward Voltage Drop PIN3 - Guard Ring for Over-Voltage Protection (OVP) Applications - Low-Voltage, High-Frequency Inverters TO-220AB - Free Wheeling and Polarity Protection + CASE PIN2 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the remended operating conditions and stressing the parts to these levels is not remended. In addition, extended exposure to stresses above the remended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units 2535CT 2545CT 2550CT 2560CT VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375 inch Lead Length at TA = 130°C Non-Repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave TSTG TJ Storage Temperature Range Operating Junction Temperature Range -65 to +175 °C -65 to +150 °C Thermal Characteristics Symbol PD RθJA RθJL Parameter Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Value 2.0 60 1.5 Units W °C/W...