MBRP3045NTU Datasheet | Fairchild Semiconductor

Features - Low forward voltage drop - High frequency properties and switching speed - Guard ring for over-voltage protection TO220 June 2008 1.Anode 3.Anode 2. Cathode .Data Sheet.co.kr Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VRRM VR IF(AV) IFSM Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 100°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Electrical Characteristics (per diode) Symbol Parameter - IRM - Maximum Instantaneous Forward Voltage IF = 15A IF = 15A IF = 30A IF = 30A Maximum Instantaneous Reverse Current @ rated VR - Pulse Test: Pulse Width=300μs, Duty Cycle=2% © 2008 Fairchild Semiconductor Corporation MBRP3045N Rev.A TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Value 45 45 30...