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Fairchild Semiconductor Electronic Components Datasheet

MPSA55 Datasheet

PNP General Purpose Amplifier

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MPSA55
MMBTA55
PZTA55
CC
C
BE
TO-92
SOT-23
Mark: 2H
E
B
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 73. See
MPSA56 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
Collector-Emitter Voltage
60
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
4.0
IC Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA55 *MMBTA55
PD Total Device Dissipation
Derate above 25°C
625 350
5.0 2.8
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA Thermal Resistance, Junction to Ambient 200
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA55
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
ã 1997 Fairchild Semiconductor Corporation
MPSA55/MMBTA55/PZTA55, Rev A


Fairchild Semiconductor Electronic Components Datasheet

MPSA55 Datasheet

PNP General Purpose Amplifier

No Preview Available !

Electrical Characteristics
Symbol
Parameter
PNP General Purpose Amplifier
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICEO Collector-Cutoff Current
ICBO Collector-Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCE = 60 V, IB = 0
VCB = 60 V, IE = 0
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
IC = 100 mA, IB = 10 mA
IC = 100 mA, VCE = 1.0 V
60 V
60 V
4.0 V
0.1 µA
0.1 µA
100
100
0.25
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
IC = 100 mA, VCE = 1.0 V,
f = 100 MHz
50
MHz


Part Number MPSA55
Description PNP General Purpose Amplifier
Maker Fairchild Semiconductor
Total Page 13 Pages
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