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MTP2955V - P-Channel MOSFET

Description

This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e.

power supplies and power motor controls.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

  • • -12 A, -60 V. RDS(ON) = 0.230 Ω @ VGS = -10 V • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating. 6.
  • ' 6 72 ' $.

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Full PDF Text Transcription

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MTP2955V May 1999 DISTRIBUTION GROUP* MTP2955V P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features • -12 A, -60 V. RDS(ON) = 0.230 Ω @ VGS = -10 V • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating.
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