MTP2955V Datasheet and Specifications PDF

MTP2955V Preferred Device Power MOSFET 12 Amps, 60 Volts P−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high.

* Avalanche Energy Specified
* IDSS and VDS(on) Specified at Elevated Temperature
* Pb
*Free Package is Available* MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain
*to
*Source Voltage Drain
*to
*Gate Voltage (RGS = 1.0 MW) Gate
*to
*Source Voltage
* Continuous
* Non
*Re.

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2955V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product ab.

of TMOS V
* On
*resistance Area Product about One
*half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
* Faster Switching than E
*FET Predecessors ™ Data Sheet V™ MTP2955V TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM P
*Channel Enhancement
*Mode Silicon Gate TM D G .

This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. These MOSFETs feature faster switching and lower g.

• -12 A, -60 V. RDS(ON) = 0.230 Ω @ VGS = -10 V • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating. 6 * * ' 6 72 ' $EV.