Datasheet Details
| Part number | MTP2955V |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 116.60 KB |
| Description | TMOS POWER FET |
| Datasheet | MTP2955V_Motorola.pdf |
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Overview: MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2955V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and mutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
| Part number | MTP2955V |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 116.60 KB |
| Description | TMOS POWER FET |
| Datasheet | MTP2955V_Motorola.pdf |
|
|
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MTP2955V | P-Channel MOSFET | Fairchild Semiconductor |
 |
MTP2955V | Power MOSFET | ON Semiconductor |
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MTP2955VG | Power MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| MTP2955 | POWER FET |
| MTP2955E | TMOS POWER FET |
| MTP29N15E | TMOS POWER FET |
| MTP20N06V | TMOS POWER FET |
| MTP20N20E | TMOS POWER FET |
| MTP23N05L | Power Field Effect Transistor |
| MTP23P06 | Power Field Effect Transistor |
| MTP23P06V | TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM |
| MTP27N10E | TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM |
| MTP2N20 | POWER FIELD EFFECT TRANSISTOR |