MTP2955E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTP2955E |
|---|---|
| Datasheet | MTP2955E_Motorola.pdf |
| File Size | 207.41 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP2955E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP2955E Motorola Preferred Device P Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTP2955V | P-Channel MOSFET | Fairchild Semiconductor |
 |
MTP2955V | Power MOSFET | ON Semiconductor |
|
MTP2955VG | Power MOSFET | ON Semiconductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP2955 | POWER FET |
| MTP2955V | TMOS POWER FET |
| MTP29N15E | TMOS POWER FET |
| MTP20N06V | TMOS POWER FET |
| MTP20N20E | TMOS POWER FET |
| MTP23N05L | Power Field Effect Transistor |
| MTP23P06 | Power Field Effect Transistor |
| MTP23P06V | TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM |
| MTP27N10E | TMOS POWER FET 27 AMPERES 100 VOLTS RDS(on) = 0.07 OHM |
| MTP2N20 | POWER FIELD EFFECT TRANSISTOR |
